Ion beam induced charge collection time imaging of a silicon microdosimeter

Cornelius, IM; Orlić, I; Siegele, R; Rosenfeld, AB; Cohen, DD

Ion beam induced charge collection time imaging of a silicon microdosimeter

Date

2003-03-04

Authors

Publisher

Elsevier

Abstract

The ion beam induced charge (IBIC) collection time imaging of a silicon microdosimeter was discussed. The zero-crossing time parameter was found to increase as a function of the distance of ion strike from the pn junction. The measurements were used with a pulse shape discrimination technique to render the microdosimeter insensitive to ion strikes outside the ideal sensitive volume. © 2003 Elsevier B.V.

Keywords

Microdosimetry, Beams, Silicon, Ionizing radiations, Therapy, Hadrons, Array processors

Citation

Cornelius, I. M., Orlic, I., Siegele, R., Rosenfeld, A. B., & Cohen, D. D. (2003). Ion beam induced charge collection time imaging of a silicon microdosimeter. Paper presented to the ICNMTA2002 - 8(th) International Conference on Nuclear Microprobe Technology & Applications - Takasaki City Gallery - Takasaki Gunma, Japan - September 8-13, 2002. In Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 210, 191-195. doi:10.1016/S0168-583X(03)01068-1