Ion beam induced charge collection time imaging of a silicon microdosimeter

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dc.contributor.authorCornelius, IMen_AU
dc.contributor.authorOrlić, Ien_AU
dc.contributor.authorSiegele, Ren_AU
dc.contributor.authorRosenfeld, ABen_AU
dc.contributor.authorCohen, DDen_AU
dc.date.accessioned2025-01-23T22:47:43Zen_AU
dc.date.available2025-01-23T22:47:43Zen_AU
dc.date.issued2003-03-04en_AU
dc.date.statistics2025-01-24en_AU
dc.description.abstractThe ion beam induced charge (IBIC) collection time imaging of a silicon microdosimeter was discussed. The zero-crossing time parameter was found to increase as a function of the distance of ion strike from the pn junction. The measurements were used with a pulse shape discrimination technique to render the microdosimeter insensitive to ion strikes outside the ideal sensitive volume. © 2003 Elsevier B.V.en_AU
dc.identifier.citationCornelius, I. M., Orlic, I., Siegele, R., Rosenfeld, A. B., & Cohen, D. D. (2003). Ion beam induced charge collection time imaging of a silicon microdosimeter. Paper presented to the ICNMTA2002 - 8(th) International Conference on Nuclear Microprobe Technology & Applications - Takasaki City Gallery - Takasaki Gunma, Japan - September 8-13, 2002. In Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 210, 191-195. doi:10.1016/S0168-583X(03)01068-1en_AU
dc.identifier.conferenceenddate2002-09-13en_AU
dc.identifier.conferencenameICNMTA2002 - 8(th) International Conference on Nuclear Microprobe Technology & Applicationsen_AU
dc.identifier.conferenceplaceTakasaki Gunma, Japan - September 8-13, 2002en_AU
dc.identifier.conferencestartdate2002-09-08en_AU
dc.identifier.editorsM. Takai and T. Kamiyaen_AU
dc.identifier.issn0168-583Xen_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atomsen_AU
dc.identifier.pagination191-195en_AU
dc.identifier.urihttps://doi.org/10.1016/s0168-583x(03)01068-1en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15951en_AU
dc.identifier.volume210en_AU
dc.languageEnglishen_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectMicrodosimetryen_AU
dc.subjectBeamsen_AU
dc.subjectSiliconen_AU
dc.subjectIonizing radiationsen_AU
dc.subjectTherapyen_AU
dc.subjectHadronsen_AU
dc.subjectArray processorsen_AU
dc.titleIon beam induced charge collection time imaging of a silicon microdosimeteren_AU
dc.typeConference Paperen_AU
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