Analysis of compound semiconductor materials using heavy ion recoil spectrometry

Heavy Ion Recoil Spectrometry has been used to examine various semiconductor material systems which cannot easily be studied using convensional ion beam techniques such as RBS. The technique enables the determination of seperate energy spectra for individual elements. This enables it to be used in many situations where RBS is inappropriate due to the superimposition of signals in the backscattering spectrum. We have employed Recoil Spectrometry to study; light element impurity concentrations, stoiciometry and metalisation contact systems for various compound semiconductor materials.- The experiments were performed at the ANTARES (TN Tandem) accelerator facillity at Lucas Heights using 61-91 MeV 12?I ions jn e incident " ' i ions cause nuclei of the sample to recoil following Rutherford scattering. The recoiling target nuclei are then analysed by a Time Of Flight and Energy (TOF-E) detector telescope composed of two timing pickoff detectors and a surface barrier (energy) detector. From the time of flight and energy, the ion mass can be determined and individual depth distributions for each element can be obtained.

Keywords

Heavy ion spectrometers, Impurities, Iodine 127 beams, Magnetic spectrometers, Measuring methods, MeV range 10-100, Recoils, Ruthford scattering, Seconday emission, Semiconductor materials, Spatial distribution, Time-of-flight method

Citation

Walker, S. R., Johnston, P. N., Bubb, I. F., Studd, W., Cohen, D. D., Dytlewski, N., Hult, M., Whitlow, H. J., Zahring, C., Östling, M., Andersson, M., & Martin, J. W. (1994). Analysis of compound semiconductor materials using heavy ion recoil spectrometry. Paper presented to the 18th Annual Consensed Matter Physics Meeting, Charles Sturt University, Riverina, Wagga, Wagga, NSW, 9-11 February 1994.

URI

https://apo.ansto.gov.au/handle/10238/15528

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