Analysis of compound semiconductor materials using heavy ion recoil spectrometry

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dc.contributor.authorWalker, SRen_AU
dc.contributor.authorJohnston, PNen_AU
dc.contributor.authorBubb, IFen_AU
dc.contributor.authorStudd, Wen_AU
dc.contributor.authorCohen, DDen_AU
dc.contributor.authorDytlewski, Nen_AU
dc.contributor.authorHult, Men_AU
dc.contributor.authorWhitlow, HJen_AU
dc.contributor.authorZahring, Cen_AU
dc.contributor.authorÖstling, Men_AU
dc.contributor.authorAndersson, Men_AU
dc.contributor.authorMartin, JWen_AU
dc.date.accessioned2024-03-01T04:37:57Zen_AU
dc.date.available2024-03-01T04:37:57Zen_AU
dc.date.issued1994-11-09en_AU
dc.date.statistics2022-04-01en_AU
dc.description.abstractHeavy Ion Recoil Spectrometry has been used to examine various semiconductor material systems which cannot easily be studied using convensional ion beam techniques such as RBS. The technique enables the determination of seperate energy spectra for individual elements. This enables it to be used in many situations where RBS is inappropriate due to the superimposition of signals in the backscattering spectrum. We have employed Recoil Spectrometry to study; light element impurity concentrations, stoiciometry and metalisation contact systems for various compound semiconductor materials.- The experiments were performed at the ANTARES (TN Tandem) accelerator facillity at Lucas Heights using 61-91 MeV 12?I ions jn e incident " ' i ions cause nuclei of the sample to recoil following Rutherford scattering. The recoiling target nuclei are then analysed by a Time Of Flight and Energy (TOF-E) detector telescope composed of two timing pickoff detectors and a surface barrier (energy) detector. From the time of flight and energy, the ion mass can be determined and individual depth distributions for each element can be obtained.en_AU
dc.description.sponsorshipThe authors wish to acknowledge the support of the Australian Institute of Nuclear Science and Engineering (AINSE), the Australian Department of Industry, Technology and Commerce (DITAC), the Swedish Institute and the Craaford Foundation. SRW also acknowledges the support of an Australian Postgraduate Research Award and an AINSE Postgraduate Research Award. The SixGei_x and AlxGai_xAs structures were produced at the Australian National University Department of Electronic Materials Engineering.en_AU
dc.identifier.articlenumberWP72en_AU
dc.identifier.citationWalker, S. R., Johnston, P. N., Bubb, I. F., Studd, W., Cohen, D. D., Dytlewski, N., Hult, M., Whitlow, H. J., Zahring, C., Östling, M., Andersson, M., & Martin, J. W. (1994). Analysis of compound semiconductor materials using heavy ion recoil spectrometry. Paper presented to the 18th Annual Consensed Matter Physics Meeting, Charles Sturt University, Riverina, Wagga, Wagga, NSW, 9-11 February 1994.en_AU
dc.identifier.conferenceenddate1994-02-11en_AU
dc.identifier.conferencename18th Annual Consensed Matter Physics Meetingen_AU
dc.identifier.conferenceplaceWagga Wagga, New South Walesen_AU
dc.identifier.conferencestartdate1994-02-09en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15528en_AU
dc.language.isoenen_AU
dc.publisherAustralian and New Zealand Institutes of Physicsen_AU
dc.subjectHeavy ion spectrometersen_AU
dc.subjectImpuritiesen_AU
dc.subjectIodine 127 beamsen_AU
dc.subjectMagnetic spectrometersen_AU
dc.subjectMeasuring methodsen_AU
dc.subjectMeV range 10-100en_AU
dc.subjectRecoilsen_AU
dc.subjectRuthford scatteringen_AU
dc.subjectSeconday emissionen_AU
dc.subjectSemiconductor materialsen_AU
dc.subjectSpatial distributionen_AU
dc.subjectTime-of-flight methoden_AU
dc.titleAnalysis of compound semiconductor materials using heavy ion recoil spectrometryen_AU
dc.typeConference Abstracten_AU
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