Development and fabrication of cylindrical silicon-on-insulator microdosimeter arrays.
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Date
2009-06
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Recent developments in the fabrication and simulation of prototype silicon-on-insulator (SOI) microdosimeter arrays are presented. A new planar array design has been proposed which has a number of advantages over the previous elongated parallelepiped and cylindrical mesa array designs. This novel planar array design, which incorporates a guard ring, is based upon 2500 planar cylindrically shaped p-i-n detectors and was fabricated via dopant diffusion and ion implantation. The dopant-diffused arrays were successfully fabricated and tested using 2 mum and 10-mum- thick SOI substrates. Technology computer-aided design modeling of the ion-implanted structure is presented which includes the electrostatic potential profile, showing possible avalanche signal multiplication around the n+ core of the microdosimeter. The alpha particle charge transient response was simulated to determine the charge collection in the sensitive region. © 2009, Institute of Electrical and Electronics Engineers (IEEE)
Description
Keywords
Townsend discharge, Microdosimetry, Silicon, Ion implantation, Computer-aided design, Cylindrical configuration
Citation
Lai, N. S., Lim, W. H., Ziebell, A. L., Reinhard, M. I., Rosenfeld, A. B., & Dzurak, A. S. (2009). Development and fabrication of cylindrical silicon-on-insulator microdosimeter arrays. IEEE Transactions on Nuclear Science, 56(3), 1637-1641. doi:10.1109/TNS.2009.2015317