Development and fabrication of cylindrical silicon-on-insulator microdosimeter arrays.
dc.contributor.author | Lai, NS | en_AU |
dc.contributor.author | Lim, WH | en_AU |
dc.contributor.author | Ziebell, AL | en_AU |
dc.contributor.author | Reinhard, MI | en_AU |
dc.contributor.author | Rosenfeld, AB | en_AU |
dc.contributor.author | Dzurak, AS | en_AU |
dc.date.accessioned | 2010-04-06T23:29:42Z | en_AU |
dc.date.accessioned | 2010-04-30T05:09:13Z | en_AU |
dc.date.available | 2010-04-06T23:29:42Z | en_AU |
dc.date.available | 2010-04-30T05:09:13Z | en_AU |
dc.date.issued | 2009-06 | en_AU |
dc.date.statistics | 2009-06 | en_AU |
dc.description.abstract | Recent developments in the fabrication and simulation of prototype silicon-on-insulator (SOI) microdosimeter arrays are presented. A new planar array design has been proposed which has a number of advantages over the previous elongated parallelepiped and cylindrical mesa array designs. This novel planar array design, which incorporates a guard ring, is based upon 2500 planar cylindrically shaped p-i-n detectors and was fabricated via dopant diffusion and ion implantation. The dopant-diffused arrays were successfully fabricated and tested using 2 mum and 10-mum- thick SOI substrates. Technology computer-aided design modeling of the ion-implanted structure is presented which includes the electrostatic potential profile, showing possible avalanche signal multiplication around the n+ core of the microdosimeter. The alpha particle charge transient response was simulated to determine the charge collection in the sensitive region. © 2009, Institute of Electrical and Electronics Engineers (IEEE) | en_AU |
dc.identifier.citation | Lai, N. S., Lim, W. H., Ziebell, A. L., Reinhard, M. I., Rosenfeld, A. B., & Dzurak, A. S. (2009). Development and fabrication of cylindrical silicon-on-insulator microdosimeter arrays. IEEE Transactions on Nuclear Science, 56(3), 1637-1641. doi:10.1109/TNS.2009.2015317 | en_AU |
dc.identifier.govdoc | 1594 | en_AU |
dc.identifier.issn | 0018-9499 | en_AU |
dc.identifier.issue | 3 | en_AU |
dc.identifier.journaltitle | IEEE Transactions on Nuclear Science | en_AU |
dc.identifier.pagination | 1637-1641 | en_AU |
dc.identifier.uri | http://dx.doi.org/10.1109/TNS.2009.2015317 | en_AU |
dc.identifier.uri | http://apo.ansto.gov.au/dspace/handle/10238/3069 | en_AU |
dc.identifier.volume | 56 | en_AU |
dc.language.iso | en | en_AU |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_AU |
dc.subject | Townsend discharge | en_AU |
dc.subject | Microdosimetry | en_AU |
dc.subject | Silicon | en_AU |
dc.subject | Ion implantation | en_AU |
dc.subject | Computer-aided design | en_AU |
dc.subject | Cylindrical configuration | en_AU |
dc.title | Development and fabrication of cylindrical silicon-on-insulator microdosimeter arrays. | en_AU |
dc.type | Journal Article | en_AU |
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