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|Title: ||Development and fabrication of cylindrical silicon-on-insulator microdosimeter arrays.|
|Authors: ||Lai, NS|
|Keywords: ||Townsend Discharge|
|Issue Date: ||Jun-2009|
|Publisher: ||Institute of Electrical and Electronics Engineers (IEEE)|
|Citation: ||Lai, N. S., Lim, W. H., Ziebell, A. L., Reinhard, M. I., Rosenfeld, A. B., & Dzurak, A. S. (2009). Development and fabrication of cylindrical silicon-on-insulator microdosimeter arrays. IEEE Transactions on Nuclear Science, 56(3), 1637-1641.|
|Abstract: ||Recent developments in the fabrication and simulation of prototype silicon-on-insulator (SOI) microdosimeter arrays are presented. A new planar array design has been proposed which has a number of advantages over the previous elongated parallelepiped and cylindrical mesa array designs. This novel planar array design, which incorporates a guard ring, is based upon 2500 planar cylindrically shaped p-i-n detectors and was fabricated via dopant diffusion and ion implantation. The dopant-diffused arrays were successfully fabricated and tested using 2 mum and 10-mum- thick SOI substrates. Technology computer-aided design modeling of the ion-implanted structure is presented which includes the electrostatic potential profile, showing possible avalanche signal multiplication around the n+ core of the microdosimeter. The alpha particle charge transient response was simulated to determine the charge collection in the sensitive region. © 2009, Institute of Electrical and Electronics Engineers (IEEE)|
|Appears in Collections:||Journal Articles|
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