Antiferromagnetic topological insulating state in Tb0.02Bi1.08Sb0.9Te2S single crystals

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Date
2023-03-13
Journal Title
Journal ISSN
Volume Title
Publisher
American Physical Society (APS)
Abstract
Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed in magnetic-topological-insulator-based devices. In this work, we report a successful doping of rare earth element Tb into Bi1.08Sb0.9Te2S topological insulator single crystals, in which the Tb moments are antiferromagnetically ordered below ∼10 K. Benefiting from the in-bulk-gap Fermi level, transport behavior dominant by the topological surface states is observed below ∼150 K. At low temperatures, strong Shubnikov-de Haas oscillations are observed, which exhibit 2D-like behavior. The topological insulator with long range magnetic ordering in rare earth doped Bi1.08Sb0.9Te2S single crystal provides an ideal platform for quantum transport studies and potential applications. ©2023 American Physical Society.
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Keywords
Antiferromagnetic materials, Rare earths, Crystals, Terbium, Quantum mechanics, Crystal doping, Hall effect
Citation
Guo, L., Zhao, W., Li, Q., Xu, M., Chen, L., Bake, A., Vu, T.-H.-Y., He, Y., Fang, Y., Cortie, D., Mo, S.-K., Edmonds, M. T., Wang, X., Dong, S., Karel, J., & Zheng, R.-K. (2023). Antiferromagnetic topological insulating state in Tb0.02 Bi1.08 Sb0.9 Te2S single crystals. Physical Review B, 107(12), 125125. doi:10.1103/PhysRevB.107.125125
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