Antiferromagnetic topological insulating state in Tb0.02Bi1.08Sb0.9Te2S single crystals

Simple item page
dc.contributor.authorGuo, Len_AU
dc.contributor.authorZhao, WYen_AU
dc.contributor.authorLi, Qen_AU
dc.contributor.authorXu, Men_AU
dc.contributor.authorChen, Len_AU
dc.contributor.authorBake, Aen_AU
dc.contributor.authorVu, THYen_AU
dc.contributor.authorHe, YHen_AU
dc.contributor.authorFang, Yen_AU
dc.contributor.authorCortie, DLen_AU
dc.contributor.authorMo, SKen_AU
dc.contributor.authorEdmonds, MTen_AU
dc.contributor.authorWang, XLen_AU
dc.contributor.authorDong, Sen_AU
dc.contributor.authorKarel, Jen_AU
dc.contributor.authorZheng, RKen_AU
dc.date.accessioned2024-12-05T21:18:53Zen_AU
dc.date.available2024-12-05T21:18:53Zen_AU
dc.date.issued2023-03-13en_AU
dc.date.statistics2024-03-20en_AU
dc.description.abstractTopological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed in magnetic-topological-insulator-based devices. In this work, we report a successful doping of rare earth element Tb into Bi1.08Sb0.9Te2S topological insulator single crystals, in which the Tb moments are antiferromagnetically ordered below ∼10 K. Benefiting from the in-bulk-gap Fermi level, transport behavior dominant by the topological surface states is observed below ∼150 K. At low temperatures, strong Shubnikov-de Haas oscillations are observed, which exhibit 2D-like behavior. The topological insulator with long range magnetic ordering in rare earth doped Bi1.08Sb0.9Te2S single crystal provides an ideal platform for quantum transport studies and potential applications. ©2023 American Physical Society.en_AU
dc.description.sponsorshipThis work was supported by ARC Centre of Excellence in Future Low-Energy Electronics Technologies Grant No. CE170100039, Australian Research Council Discovery Project No. DP200102477, and the National Natural Science Foundation of China (Grants No. 11974155 and No. 12174039). This research used resources of the Advanced Light Source, which is a DOE Office and Science User Facility under Contract No. DE-AC02-05CH11231. W.Z. acknowledges support from AINSE through PGRA and ECRG.en_AU
dc.identifier.articlenumber125125en_AU
dc.identifier.citationGuo, L., Zhao, W., Li, Q., Xu, M., Chen, L., Bake, A., Vu, T.-H.-Y., He, Y., Fang, Y., Cortie, D., Mo, S.-K., Edmonds, M. T., Wang, X., Dong, S., Karel, J., & Zheng, R.-K. (2023). Antiferromagnetic topological insulating state in Tb0.02 Bi1.08 Sb0.9 Te2S single crystals. Physical Review B, 107(12), 125125. doi:10.1103/PhysRevB.107.125125en_AU
dc.identifier.issn2469-9950en_AU
dc.identifier.issn2469-9969en_AU
dc.identifier.issue12en_AU
dc.identifier.journaltitlePhysical Review Ben_AU
dc.identifier.urihttps://doi.org/10.1103/physrevb.107.125125en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15779en_AU
dc.identifier.volume107en_AU
dc.languageEnglishen_AU
dc.language.isoenen_AU
dc.publisherAmerican Physical Society (APS)en_AU
dc.subjectAntiferromagnetic materialsen_AU
dc.subjectRare earthsen_AU
dc.subjectCrystalsen_AU
dc.subjectTerbiumen_AU
dc.subjectQuantum mechanicsen_AU
dc.subjectCrystal dopingen_AU
dc.subjectHall effecten_AU
dc.titleAntiferromagnetic topological insulating state in Tb0.02Bi1.08Sb0.9Te2S single crystalsen_AU
dc.typeJournal Articleen_AU
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.66 KB
Format:
Plain Text
Description:
Download
Collections
Journal Articles