A high temperature operando study of epitaxial graphene growth on cubic silicon carbide using neutron reflectometry
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Date
2024-05-30
Journal Title
Journal ISSN
Volume Title
Publisher
Taylor & Francis
Abstract
The synthesis of epitaxial graphene (EG) on cubic silicon carbide on silicon substrates holds vast promise for scalable graphene-based electronics and photonics applications integrated with silicon technology. The 3C-SiC/silicon platform is particularly challenging due, among other factors, to the highly defective nature of the 3C-SiC [Citation1]. We have pioneered the use of a Ni/Cu catalyst to obtain a continuous coverage of graphene despite the defective cubic silicon carbide surface template, inferring that this considerable improvement was also to the liquid-phase epitaxial growth condition at 1100°C [Citation2]. A detailed understanding of the graphene growth mechanism through operando analysis is critical in order to optimize further the Ni/Cu catalyst composition and further refine the graphene synthesis process. © 2024Informa UK Limited
Description
Keywords
Temperature range, Graphene, Silicon carbides, Neutron reflectors, Synthesis, Neutrons, Scattering
Citation
Pradeepkumar, A., Cortie, D., Smyth, E., Le Brun, A. P., & Iacopi, F. (2024). A high temperature operando study of epitaxial graphene growth on cubic silicon carbide using neutron reflectometry. Neutron News, 35(2), 9–11. doi:10.1080/10448632.2024.2355855