A high temperature operando study of epitaxial graphene growth on cubic silicon carbide using neutron reflectometry

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dc.contributor.authorPradeepkumar, Aen_AU
dc.contributor.authorCortie, DLen_AU
dc.contributor.authorSmyth, Een_AU
dc.contributor.authorLe Brun, APen_AU
dc.contributor.authorIacopi, Fen_AU
dc.date.accessioned2024-10-03T21:13:54Zen_AU
dc.date.available2024-10-03T21:13:54Zen_AU
dc.date.issued2024-05-30en_AU
dc.date.statistics2024-10-04en_AU
dc.description.abstractThe synthesis of epitaxial graphene (EG) on cubic silicon carbide on silicon substrates holds vast promise for scalable graphene-based electronics and photonics applications integrated with silicon technology. The 3C-SiC/silicon platform is particularly challenging due, among other factors, to the highly defective nature of the 3C-SiC [Citation1]. We have pioneered the use of a Ni/Cu catalyst to obtain a continuous coverage of graphene despite the defective cubic silicon carbide surface template, inferring that this considerable improvement was also to the liquid-phase epitaxial growth condition at 1100°C [Citation2]. A detailed understanding of the graphene growth mechanism through operando analysis is critical in order to optimize further the Ni/Cu catalyst composition and further refine the graphene synthesis process. © 2024Informa UK Limiteden_AU
dc.identifier.citationPradeepkumar, A., Cortie, D., Smyth, E., Le Brun, A. P., & Iacopi, F. (2024). A high temperature operando study of epitaxial graphene growth on cubic silicon carbide using neutron reflectometry. Neutron News, 35(2), 9–11. doi:10.1080/10448632.2024.2355855en_AU
dc.identifier.issn1044-8632en_AU
dc.identifier.issn1931-7352en_AU
dc.identifier.issue2en_AU
dc.identifier.journaltitleNeutron Newsen_AU
dc.identifier.pagination9-11en_AU
dc.identifier.urihttp://dx.doi.org/10.1080/10448632.2024.2355855en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15709en_AU
dc.identifier.volume35en_AU
dc.languageEnglishen_AU
dc.language.isoenen_AU
dc.publisherTaylor & Francisen_AU
dc.subjectTemperature rangeen_AU
dc.subjectGrapheneen_AU
dc.subjectSilicon carbidesen_AU
dc.subjectNeutron reflectorsen_AU
dc.subjectSynthesisen_AU
dc.subjectNeutronsen_AU
dc.subjectScatteringen_AU
dc.titleA high temperature operando study of epitaxial graphene growth on cubic silicon carbide using neutron reflectometryen_AU
dc.typeJournal Articleen_AU
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