Characterisation of arsenic doped HgCdTe grown by molecular beam epitaxy
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Date
2006-12-06
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
Extrinsic p-type doping of Mercury Cadmium Tel-luride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier Transform Infrared Transmission Spectrometry (FTIR), Secondary Ion Mass Spectrometry (SIMS) as well as variable field magneto-transport measurements coupled with the quantitative mobility spectrum analysis (QMSA) to study the Hall effect characteristics. Arsenic activation annealing of the samples were performed and magneto-transport measurements repeated. Results indicate that as-grown samples show n-type behaviour indicating that arsenic incorporate as donors in the material with annealed samples showing p-type characteristics with heavy compensation. © Copyright 2006 IEEE
Description
Keywords
Molecular beam epitaxy, Infrared spectra, Mass spectroscopy, Magnetic fields, Annealing, Cadmium, Fourier transformation, Couplings, Magnetic analyzers
Citation
Tsen, G. K. O., Sewell, R., Atanacio, A. J., Prince, K. E., Musca, C. A., Dell, J. M., Antoszewski,J & Faraone, L. (2006, December). Characterisation of arsenic doped HgCdTe grown by molecular beam epitaxy. Paper presented to the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 6-8 Dec, 2006, Perth, Western Australia. In 2006 Conference on Optoelectronic and Microelectronic Materials and Devicesm , Perth, WA, Australia, 2006, (pp. 55-58). IEEE. doi: 10.1109/COMMAD.2006.4429878