Characterisation of arsenic doped HgCdTe grown by molecular beam epitaxy

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dc.contributor.authorTsen, GKen_AU
dc.contributor.authorSewell, RHen_AU
dc.contributor.authorAtanacio, AJen_AU
dc.contributor.authorPrince, KEen_AU
dc.contributor.authorMusca, CAen_AU
dc.contributor.authorDell, JMen_AU
dc.contributor.authorAntoszewski, Jen_AU
dc.contributor.authorFaraone, Len_AU
dc.date.accessioned2020-10-25T19:26:49Zen_AU
dc.date.available2020-10-25T19:26:49Zen_AU
dc.date.issued2006-12-06en_AU
dc.date.statistics2020-10-22en_AU
dc.description.abstractExtrinsic p-type doping of Mercury Cadmium Tel-luride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier Transform Infrared Transmission Spectrometry (FTIR), Secondary Ion Mass Spectrometry (SIMS) as well as variable field magneto-transport measurements coupled with the quantitative mobility spectrum analysis (QMSA) to study the Hall effect characteristics. Arsenic activation annealing of the samples were performed and magneto-transport measurements repeated. Results indicate that as-grown samples show n-type behaviour indicating that arsenic incorporate as donors in the material with annealed samples showing p-type characteristics with heavy compensation. © Copyright 2006 IEEEen_AU
dc.identifier.booktitleProceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices : 6-8 December 2006, Perth, Australiaen_AU
dc.identifier.citationTsen, G. K. O., Sewell, R., Atanacio, A. J., Prince, K. E., Musca, C. A., Dell, J. M., Antoszewski,J & Faraone, L. (2006, December). Characterisation of arsenic doped HgCdTe grown by molecular beam epitaxy. Paper presented to the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 6-8 Dec, 2006, Perth, Western Australia. In 2006 Conference on Optoelectronic and Microelectronic Materials and Devicesm , Perth, WA, Australia, 2006, (pp. 55-58). IEEE. doi: 10.1109/COMMAD.2006.4429878en_AU
dc.identifier.conferenceenddate8 December 2006en_AU
dc.identifier.conferencename2006 Conference on Optoelectronic and Microelectronic Materials and Devicesen_AU
dc.identifier.conferenceplacePerth, Western Australiaen_AU
dc.identifier.conferencestartdate6 December 2006en_AU
dc.identifier.isbn978-1-4244-0577-0en_AU
dc.identifier.pagination55-58en_AU
dc.identifier.urihttps://ieeexplore.ieee.org/document/4429878en_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/9932en_AU
dc.language.isoenen_AU
dc.publisherIEEEen_AU
dc.subjectMolecular beam epitaxyen_AU
dc.subjectInfrared spectraen_AU
dc.subjectMass spectroscopyen_AU
dc.subjectMagnetic fieldsen_AU
dc.subjectAnnealingen_AU
dc.subjectCadmiumen_AU
dc.subjectFourier transformationen_AU
dc.subjectCouplingsen_AU
dc.subjectMagnetic analyzersen_AU
dc.titleCharacterisation of arsenic doped HgCdTe grown by molecular beam epitaxyen_AU
dc.typeConference Paperen_AU
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