Characterisation of arsenic doped HgCdTe grown by molecular beam epitaxy
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IEEE
Abstract
Extrinsic p-type doping of Mercury Cadmium Tel-luride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier Transform Infrared Transmission Spectrometry (FTIR), Secondary Ion Mass Spectrometry (SIMS) as well as variable field magneto-transport measurements coupled with the quantitative mobility spectrum analysis (QMSA) to study the Hall effect characteristics. Arsenic activation annealing of the samples were performed and magneto-transport measurements repeated. Results indicate that as-grown samples show n-type behaviour indicating that arsenic incorporate as donors in the material with annealed samples showing p-type characteristics with heavy compensation. © Copyright 2006 IEEE
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Tsen, G. K. O., Sewell, R., Atanacio, A. J., Prince, K. E., Musca, C. A., Dell, J. M., Antoszewski,J & Faraone, L. (2006, December). Characterisation of arsenic doped HgCdTe grown by molecular beam epitaxy. Paper presented to the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 6-8 Dec, 2006, Perth, Western Australia. In 2006 Conference on Optoelectronic and Microelectronic Materials and Devicesm , Perth, WA, Australia, 2006, (pp. 55-58). IEEE. doi: 10.1109/COMMAD.2006.4429878