Tuning the defect density in chemically synthesized graphene
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Date
2010-01-22
Authors
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Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Gram-scale quantities of graphene sheets can be synthesized in a bottom-up chemical approach and we have sought to address the extent of the defect density using various characterization techniques which include X-ray diffraction, high resolution transmission electron microscopy, single area electron diffraction, Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the chemically synthesized graphene sheets have a tendency to stack without inter-planar coherence such as that found in graphite. The driving force behind this stacking is believed to be due to π-π interactions between overlaid carbon sheets. The overall defect density was shown to decrease by simply varying the carbon precursor used in the chemical synthesis. © Copyright 2020 IEEE
Description
Keywords
Graphite, Defects, X-ray diffraction, Atomic force microscopy, Stacking faults, Carbon
Citation
Choucair, M., & Stride, J. A. (2010). Tuning the defect density in chemically synthesized graphene. Paper presented to the 9th IEEE Conference on Nanotechnology (IEEE NANO 2009), 26th – 30th July 2009. In Proceedings of the 9th IEEE Conference on Nanotechnology (pp. 815-817). Genoa, Italy: DIST Genoa University.