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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/2102

Title: Tuning the defect density in chemically synthesized graphene.
Authors: Choucair, M
Stride, JA
Keywords: Graphite
Defects
X-Ray Diffraction
Atomic Force Microscopy
Stacking Faults
Carbon
Issue Date: 22-Jan-2010
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Citation: Choucair, M., & Stride, J. A. (2010). Tuning the defect density in chemically synthesized graphene. 9th IEEE Conference on Nanotechnology (IEEE NANO 2009), 26th – 30th July 2009. In Proceedings of the 9th IEEE Conference on Nanotechnology (pp. 815-817). Genoa, Italy: DIST Genoa University.
Abstract: Gram-scale quantities of graphene sheets can be synthesized in a bottom-up chemical approach and we have sought to address the extent of the defect density using various characterization techniques which include X-ray diffraction, high resolution transmission electron microscopy, single area electron diffraction, Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the chemically synthesized graphene sheets have a tendency to stack without inter-planar coherence such as that found in graphite. The driving force behind this stacking is believed to be due to π-π interactions between overlaid carbon sheets. The overall defect density was shown to decrease by simply varying the carbon precursor used in the chemical synthesis.
URI: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5394703
http://apo.ansto.gov.au/dspace/handle/10238/2102
ISBN: 9781424448326
ISSN: 1944-9399
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