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ANSTO Publications Online >
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Please use this identifier to cite or link to this item:
http://apo.ansto.gov.au/dspace/handle/10238/2102
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| Title: | Tuning the defect density in chemically synthesized graphene. |
| Authors: | Choucair, M Stride, JA |
| Keywords: | Graphite Defects X-Ray Diffraction Atomic Force Microscopy Stacking Faults Carbon |
| Issue Date: | 22-Jan-2010 |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| Citation: | Choucair, M., & Stride, J. A. (2010). Tuning the defect density in chemically synthesized graphene. 9th IEEE Conference on Nanotechnology (IEEE NANO 2009), 26th – 30th July 2009. In Proceedings of the 9th IEEE Conference on Nanotechnology (pp. 815-817). Genoa, Italy: DIST Genoa University. |
| Abstract: | Gram-scale quantities of graphene sheets can be synthesized in a bottom-up chemical approach and we have sought to address the extent of the defect density using various characterization techniques which include X-ray diffraction, high resolution transmission electron microscopy, single area electron diffraction, Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the chemically synthesized graphene sheets have a tendency to stack without inter-planar coherence such as that found in graphite. The driving force behind this stacking is believed to be due to π-π interactions between overlaid carbon sheets. The overall defect density was shown to decrease by simply varying the carbon precursor used in the chemical synthesis. |
| URI: | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5394703 http://apo.ansto.gov.au/dspace/handle/10238/2102 |
| ISBN: | 9781424448326 |
| ISSN: | 1944-9399 |
| Appears in Collections: | Conference Publications |
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