Tuning the defect density in chemically synthesized graphene

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dc.contributor.authorChoucair, Men_AU
dc.contributor.authorStride, JAen_AU
dc.date.accessioned2010-08-06T06:19:25Zen_AU
dc.date.available2010-08-06T06:19:25Zen_AU
dc.date.issued2010-01-22en_AU
dc.date.statistics2010-01-01en_AU
dc.description.abstractGram-scale quantities of graphene sheets can be synthesized in a bottom-up chemical approach and we have sought to address the extent of the defect density using various characterization techniques which include X-ray diffraction, high resolution transmission electron microscopy, single area electron diffraction, Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the chemically synthesized graphene sheets have a tendency to stack without inter-planar coherence such as that found in graphite. The driving force behind this stacking is believed to be due to π-π interactions between overlaid carbon sheets. The overall defect density was shown to decrease by simply varying the carbon precursor used in the chemical synthesis. © Copyright 2020 IEEEen_AU
dc.identifier.booktitleProceedings of the 9th IEEE Conference on Nanotechnologyen_AU
dc.identifier.citationChoucair, M., & Stride, J. A. (2010). Tuning the defect density in chemically synthesized graphene. Paper presented to the 9th IEEE Conference on Nanotechnology (IEEE NANO 2009), 26th – 30th July 2009. In Proceedings of the 9th IEEE Conference on Nanotechnology (pp. 815-817). Genoa, Italy: DIST Genoa University.en_AU
dc.identifier.conferenceenddate30 July 2009en_AU
dc.identifier.conferencename9th IEEE Conference on Nanotechnology (IEEE NANO 2009)en_AU
dc.identifier.conferenceplaceGenoa, Italyen_AU
dc.identifier.conferencestartdate26 July 2009en_AU
dc.identifier.govdoc2221en_AU
dc.identifier.isbn9781424448326en_AU
dc.identifier.issn1944-9399en_AU
dc.identifier.pagination815-817en_AU
dc.identifier.placeofpublicationGenoa, Italyen_AU
dc.identifier.urihttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5394703en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/2102en_AU
dc.language.isoenen_AU
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_AU
dc.subjectGraphiteen_AU
dc.subjectDefectsen_AU
dc.subjectX-ray diffractionen_AU
dc.subjectAtomic force microscopyen_AU
dc.subjectStacking faultsen_AU
dc.subjectCarbonen_AU
dc.titleTuning the defect density in chemically synthesized grapheneen_AU
dc.typeConference Paperen_AU
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