Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium.

Tavendale, AJ; Pearton, SJ

Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium.

Files

AAEC-E-564.pdf(353.65 KB)

Date

1983-04

Authors

Tavendale, AJ

Pearton, SJ

Publisher

Australian Atomic Energy Commission

Abstract

Effects of the hydrogenation of deep level, hole-trapping centres associated with grain boundaries incorporated in diodes from n- and p- type germanium have been examined by deep level transient capacitance spectroscopy and measurement of reverse bias leakage current. Significant reductions in diode leakage current (by factors of 2 to 10 at 77 K) and suppression of deep level centres were observed following exposure to a low pressure (0.5 torr), radio-frequency-induced hydrogen plasma at 300oC for 2 hours; no reversal was observed after a subsequent vacuum anneal at the same temperature and time.

Keywords

Hydrogenation, Germanium diodes, Plasma, Spectroscopy, Grain boundaries

Citation

Tavendale, A. J., Pearton, S. J. (1983). Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium. (AAEC/E564). Lucas Heights, NSW: Australian Atomic Energy Commission.