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ANSTO Publications Online >
ANSTO Publications >
Scientific and Technical Reports >
Please use this identifier to cite or link to this item:
http://apo.ansto.gov.au/dspace/handle/10238/163
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| Title: | Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium. |
| Authors: | Tavendale, AJ Pearton, SJ |
| Issue Date: | Apr-1983 |
| Publisher: | Australian Nuclear Science and Technology Organisation |
| Abstract: | Effects of the hydrogenation of deep level, hole-trapping centres associated with grain boundaries incorporated in diodes from n- and p- type germanium have been examined by deep level transient capacitance spectroscopy and measurement of reverse bias leakage current. Significant reductions in diode leakage current (by factors of 2 to 10 at 77 K) and suppression of deep level centres were observed following exposure to a low pressure (0.5 torr), radio-frequency-induced hydrogen plasma at 300oC for 2 hours; no reversal was observed after a subsequent vacuum anneal at the same temperature and time. |
| URI: | http://apo.ansto.gov.au/dspace/handle/10238/163 |
| ISBN: | 0642597707 |
| Appears in Collections: | Scientific and Technical Reports |
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