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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/163

Title: Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium.
Authors: Tavendale, AJ
Pearton, SJ
Issue Date: Apr-1983
Publisher: Australian Nuclear Science and Technology Organisation
Abstract: Effects of the hydrogenation of deep level, hole-trapping centres associated with grain boundaries incorporated in diodes from n- and p- type germanium have been examined by deep level transient capacitance spectroscopy and measurement of reverse bias leakage current. Significant reductions in diode leakage current (by factors of 2 to 10 at 77 K) and suppression of deep level centres were observed following exposure to a low pressure (0.5 torr), radio-frequency-induced hydrogen plasma at 300oC for 2 hours; no reversal was observed after a subsequent vacuum anneal at the same temperature and time.
URI: http://apo.ansto.gov.au/dspace/handle/10238/163
ISBN: 0642597707
Appears in Collections:Scientific and Technical Reports

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