Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium.

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dc.contributor.authorTavendale, AJen_AU
dc.contributor.authorPearton, SJen_AU
dc.date.accessioned2007-11-22T04:13:55Zen_AU
dc.date.accessioned2010-04-30T04:28:21Zen_AU
dc.date.available2007-11-22T04:13:55Zen_AU
dc.date.available2010-04-30T04:28:21Zen_AU
dc.date.issued1983-04en_AU
dc.description.abstractEffects of the hydrogenation of deep level, hole-trapping centres associated with grain boundaries incorporated in diodes from n- and p- type germanium have been examined by deep level transient capacitance spectroscopy and measurement of reverse bias leakage current. Significant reductions in diode leakage current (by factors of 2 to 10 at 77 K) and suppression of deep level centres were observed following exposure to a low pressure (0.5 torr), radio-frequency-induced hydrogen plasma at 300oC for 2 hours; no reversal was observed after a subsequent vacuum anneal at the same temperature and time.en_AU
dc.identifier.citationTavendale, A. J., Pearton, S. J. (1983). Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium. (AAEC/E564). Lucas Heights, NSW: Australian Atomic Energy Commission.en_AU
dc.identifier.govdoc112en_AU
dc.identifier.isbn0642597707en_AU
dc.identifier.otherAAEC-E-564en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/163en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectHydrogenationen_AU
dc.subjectGermanium diodesen_AU
dc.subjectPlasmaen_AU
dc.subjectSpectroscopyen_AU
dc.subjectGrain boundariesen_AU
dc.titleHydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium.en_AU
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