An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysis

Abstract

Rutherford scattering analysis with 2.0 MeV 4He+ ions failed to detect doping of silicon substrates with arsenic following cathodic electroplating. This is in contrast with the claims of J. Antula [J. Appl. Phys., 48:2581, 1977] that electromigration leads to the formation of n-type, arsenic-doped, near-surface layers in silicon. Arsenic was detected only in the surface oxide layer formed during plating. Complementary thermoprobe measurements also showed no doping effects in the silicon substrates.