An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysis
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Date
1983-02
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Atomic Energy Commission
Abstract
Rutherford scattering analysis with 2.0 MeV 4He+ ions failed to detect doping of silicon substrates with arsenic following cathodic electroplating. This is in contrast with the claims of J. Antula [J. Appl. Phys., 48:2581, 1977] that electromigration leads to the formation of n-type, arsenic-doped, near-surface layers in silicon. Arsenic was detected only in the surface oxide layer formed during plating. Complementary thermoprobe measurements also showed no doping effects in the silicon substrates.
Description
Keywords
Arsenic, Silicon, Electrodeposited coatings, Radiation scattering analysis, Doped materials
Citation
Tavendale, A. J., & Lawson, E. M. (1983). An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysis. (AAEC/E561). Lucas Heights, NSW: Australian Atomic Energy Commission.