An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysis

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dc.contributor.authorTavendale, AJen_AU
dc.contributor.authorLawson, EMen_AU
dc.date.accessioned2007-11-22T04:13:53Zen_AU
dc.date.accessioned2010-04-30T04:28:20Zen_AU
dc.date.available2007-11-22T04:13:53Zen_AU
dc.date.available2010-04-30T04:28:20Zen_AU
dc.date.issued1983-02en_AU
dc.description.abstractRutherford scattering analysis with 2.0 MeV 4He+ ions failed to detect doping of silicon substrates with arsenic following cathodic electroplating. This is in contrast with the claims of J. Antula [J. Appl. Phys., 48:2581, 1977] that electromigration leads to the formation of n-type, arsenic-doped, near-surface layers in silicon. Arsenic was detected only in the surface oxide layer formed during plating. Complementary thermoprobe measurements also showed no doping effects in the silicon substrates.en_AU
dc.identifier.citationTavendale, A. J., & Lawson, E. M. (1983). An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysis. (AAEC/E561). Lucas Heights, NSW: Australian Atomic Energy Commission.en_AU
dc.identifier.govdoc111en_AU
dc.identifier.isbn0642597634en_AU
dc.identifier.otherAAEC-E-561en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/162en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectArsenicen_AU
dc.subjectSiliconen_AU
dc.subjectElectrodeposited coatingsen_AU
dc.subjectRadiation scattering analysisen_AU
dc.subjectDoped materialsen_AU
dc.titleAn attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysisen_AU
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