A q-switched ruby laser for producing laser-doped contacts to semiconductors
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Date
1982-08
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Atomic Energy Commission
Abstract
A description is given of a q-switched ruby laser used for producing laser-doped contacts on semiconductors.Homogenisation of the laser beam and measurement of the output energy are discussed and some attention is given to the problems of sample reflectivity. A brief outline of the laser-doping process is provided, together with recent experimental results and details relating to the production and analysis of the contacts. A preliminary result of defect characteristics after laser irradiation of germanium is also presented.
Description
Keywords
Laser radiation, Semiconductor materials, Ruby lasers, Q-switching, Crystal doping, Germanium, Silicon
Citation
Rose, A., & Lawson, E. M. (1982). A q-switched ruby laser for producing laser-doped contacts to semiconductors. (AAEC/E546). Lucas Heights, NSW: Australian Atomic Energy Commission.