A q-switched ruby laser for producing laser-doped contacts to semiconductors

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dc.contributor.authorRose, Aen_AU
dc.contributor.authorLawson, EMen_AU
dc.date.accessioned2007-11-22T04:13:43Zen_AU
dc.date.accessioned2010-04-30T04:28:12Zen_AU
dc.date.available2007-11-22T04:13:43Zen_AU
dc.date.available2010-04-30T04:28:12Zen_AU
dc.date.issued1982-08en_AU
dc.description.abstractA description is given of a q-switched ruby laser used for producing laser-doped contacts on semiconductors.Homogenisation of the laser beam and measurement of the output energy are discussed and some attention is given to the problems of sample reflectivity. A brief outline of the laser-doping process is provided, together with recent experimental results and details relating to the production and analysis of the contacts. A preliminary result of defect characteristics after laser irradiation of germanium is also presented.en_AU
dc.identifier.citationRose, A., & Lawson, E. M. (1982). A q-switched ruby laser for producing laser-doped contacts to semiconductors. (AAEC/E546). Lucas Heights, NSW: Australian Atomic Energy Commission.en_AU
dc.identifier.govdoc101en_AU
dc.identifier.isbn0642597499en_AU
dc.identifier.otherAAEC-E-546en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/152en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectLaser radiationen_AU
dc.subjectSemiconductor materialsen_AU
dc.subjectRuby lasersen_AU
dc.subjectQ-switchingen_AU
dc.subjectCrystal dopingen_AU
dc.subjectGermaniumen_AU
dc.subjectSiliconen_AU
dc.titleA q-switched ruby laser for producing laser-doped contacts to semiconductorsen_AU
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