A q-switched ruby laser for producing laser-doped contacts to semiconductors

Abstract

A description is given of a q-switched ruby laser used for producing laser-doped contacts on semiconductors.Homogenisation of the laser beam and measurement of the output energy are discussed and some attention is given to the problems of sample reflectivity. A brief outline of the laser-doping process is provided, together with recent experimental results and details relating to the production and analysis of the contacts. A preliminary result of defect characteristics after laser irradiation of germanium is also presented.