Search for an anomalous near-surface yield deficit in Rutherford backscattering spectra from implanted germanium and silicon
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Date
1983-09
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Atomic Energy Commission
Abstract
Rutherford backscattering and channelling analysis of high-dose room-temperature ion-implanted germanium has revealed an anomalous near-surface yield deficit. Implant dose and species dependencies and the effect of annealing have been examined. A marked loss of implanted impurity was also noted. The yield deficit is attributed to the absorption of oxygen and other light mass contaminants into a highly porous implanted layer upon exposure to air. Loss of implant species is attributed to enhanced sputtering effects.
Description
Keywords
Rutherford scattering, Backscattering, Physical radiation effects, Germanium, Silicon, Ion channeling
Citation
Lawson, E., Williams, J. S., Chivers, D. J., Short, K. T., & Appleton, B. R. (1983). Search for an anomalous near-surface yield deficit in rutherford backscattering spectra from implanted germanium and silicon (AAEC/E573). Lucas Heights, N.S.W.: Australian Atomic Energy Commission, Research Establishment.