Search for an anomalous near-surface yield deficit in Rutherford backscattering spectra from implanted germanium and silicon

Abstract

Rutherford backscattering and channelling analysis of high-dose room-temperature ion-implanted germanium has revealed an anomalous near-surface yield deficit. Implant dose and species dependencies and the effect of annealing have been examined. A marked loss of implanted impurity was also noted. The yield deficit is attributed to the absorption of oxygen and other light mass contaminants into a highly porous implanted layer upon exposure to air. Loss of implant species is attributed to enhanced sputtering effects.