Preliminary investigations of the formation of laser-doped contacts on semiconductors
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Date
1981-10
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Atomic Energy Commission
Abstract
Contacts formed by laser doping single crystal semiconducting samples have been investigated by a variety of techniques. p- and n-type contacts have been formed on Ge, Si and GaAs by irradiating evaporated surface layers with a Q-switched ruby laser. The contact produced were thin and heavily doped. Techniques used to examine the contacts include Rutherford backscattering, scanning electron microscopy and sheet Hall and resistivity measurements.
Description
Keywords
Electric contacts, Annealing, Laser radiation, P-type conductors, Germanium, Doped materials
Citation
Lawson, E. M. (1981). Preliminary investigations of the formation of laser-doped contacts on semiconductors. (AAEC/E523). Lucas Heights, NSW: Australian Atomic Energy Commission.