Preliminary investigations of the formation of laser-doped contacts on semiconductors

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dc.contributor.authorLawson, EMen_AU
dc.date.accessioned2007-11-22T04:27:42Zen_AU
dc.date.accessioned2010-04-30T04:38:35Zen_AU
dc.date.available2007-11-22T04:27:42Zen_AU
dc.date.available2010-04-30T04:38:35Zen_AU
dc.date.issued1981-10en_AU
dc.description.abstractContacts formed by laser doping single crystal semiconducting samples have been investigated by a variety of techniques. p- and n-type contacts have been formed on Ge, Si and GaAs by irradiating evaporated surface layers with a Q-switched ruby laser. The contact produced were thin and heavily doped. Techniques used to examine the contacts include Rutherford backscattering, scanning electron microscopy and sheet Hall and resistivity measurements.en_AU
dc.identifier.citationLawson, E. M. (1981). Preliminary investigations of the formation of laser-doped contacts on semiconductors. (AAEC/E523). Lucas Heights, NSW: Australian Atomic Energy Commission.en_AU
dc.identifier.govdoc688en_AU
dc.identifier.isbn0642597219en_AU
dc.identifier.otherAAEC-E-523en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/678en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectElectric contactsen_AU
dc.subjectAnnealingen_AU
dc.subjectLaser radiationen_AU
dc.subjectP-type conductorsen_AU
dc.subjectGermaniumen_AU
dc.subjectDoped materialsen_AU
dc.titlePreliminary investigations of the formation of laser-doped contacts on semiconductorsen_AU
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