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ANSTO Publications Online >
ANSTO Publications >
Scientific and Technical Reports >
Please use this identifier to cite or link to this item:
http://apo.ansto.gov.au/dspace/handle/10238/678
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| Title: | Preliminary investigations of the formation of laser-doped contacts on semiconductors. |
| Authors: | Lawson, EM |
| Issue Date: | Oct-1981 |
| Publisher: | Australian Nuclear Science and Technology Organisation |
| Abstract: | Contacts formed by laser doping single crystal semiconducting samples have been investigated by a variety of techniques. p- and n-type contacts have been formed on Ge, Si and GaAs by irradiating evaporated surface layers with a Q-switched ruby laser. The contact produced were thin and heavily doped. Techniques used to examine the contacts include Rutherford backscattering, scanning electron microscopy and sheet Hall and resistivity measurements. |
| URI: | http://apo.ansto.gov.au/dspace/handle/10238/678 |
| ISBN: | 0642597219 |
| Appears in Collections: | Scientific and Technical Reports |
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