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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/678

Title: Preliminary investigations of the formation of laser-doped contacts on semiconductors.
Authors: Lawson, EM
Issue Date: Oct-1981
Publisher: Australian Nuclear Science and Technology Organisation
Abstract: Contacts formed by laser doping single crystal semiconducting samples have been investigated by a variety of techniques. p- and n-type contacts have been formed on Ge, Si and GaAs by irradiating evaporated surface layers with a Q-switched ruby laser. The contact produced were thin and heavily doped. Techniques used to examine the contacts include Rutherford backscattering, scanning electron microscopy and sheet Hall and resistivity measurements.
URI: http://apo.ansto.gov.au/dspace/handle/10238/678
ISBN: 0642597219
Appears in Collections:Scientific and Technical Reports

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