Pentavalent manganese luminescence: designing narrow-band near-infrared light-emitting diodes as next-generation compact light sources
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Date
2023-11-30
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society
Abstract
Manganese in the pentavalent state (Mn5+) is both rare and central in materials exhibiting narrow-band near-infrared (NIR) emission and is highly sought after for phosphor-converted light-emitting diodes as promising candidates for future miniature solid-state NIR light source. We develop the Ca14Zn6Ga10-xMnxO35 (x = 0.3, 0.5, 1.0, 1.25, 1.5, and 3.0) series that exhibit simultaneous Mn4+ (650-750 nm) and Mn5+ (1100-1250 nm) luminescence. We reveal a preferential occupancy of Mn in regular octahedral and tetrahedral environments, with the short bond length between these responsible for luminescence. We present a theoretical spin-orbital interaction model in which breaking the spin selection rule permits the luminescence of Mn4+ and Mn5+. A total photon flux of 87.5 mW under a 7 mA driving current demonstrates its potential for real-time application. This work pushes our understanding of achieving Mn5+ luminescence and opens the way for the design of Mn5+-based narrow-band NIR phosphors. © 2022 American Chemical Society.
Description
Keywords
Luminescence, Orbits, Spin, Photons, Phosphors, Gallium, Zinc, Calcium, Manganese, Silicon diodes, Metals, Infrared spectra, Light Sources
Citation
Rajendran, V., Chen, K.-C., Huang, W.-T., Majewska, N., Leśniewski, T., Grzegorczyk, M., Mahlik, S., Leniec, G., Kaczmarek, S. M., Pang, W. K., Peterson, V. K., Lu, K.-M., Chang, H., & Liu, R.-S. (2023). Pentavalent manganese luminescence: designing narrow-band near-infrared light-emitting diodes as next-generation compact light sources. ACS Energy Letters, 8(1), 289-295. doi:10.1021/acsenergylett.2c02403