Characterisation of epitaxial TiO2 thin films grown on MgO(0 0 1) using atomic layer deposition
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Date
2005-11-15
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Elsevier
Abstract
Thin films of TiO2 have been deposited onto MgO(0 0 1) substrates using atomic layer deposition at 300 °C. Plan and cross-sectional transmission electron microscopy (TEM), X-ray diffraction and atomic force microscopy have been used to understand the nature of the films. X-ray and electron diffraction showed that a polycrystalline, epitaxial anatase film was produced. The c-axis of the anatase was parallel to the MgO(0 0 1) surface with two orientational variants at right angles to each other in the plane of the film, each aligned with an MgO cube axis. Plan-view and cross-sectional TEM showed that the grain structure of the film reflected this orientation relationship, with the grain morphology comprising two sets of roughly tetragonal grains. Also present was a small fraction of equiaxed, anatase grains which were randomly oriented. Roughness measurement using atomic force microscopy showed that the epitaxial anatase films were quite smooth, in comparison to equivalent non-aligned films grown on silicon. Crown copyright © 2005. Published by Elsevier B.V.
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Keywords
Epitaxy, Titanium oxides, Thin Films, Layers, Substrates, X-ray diffraction, Transmission electron microscopy, Roughness
Citation
Mitchell, D. R. G., Attard, D. J., & Triani, G. (2005). Characterisation of epitaxial TiO2 thin films grown on MgO(0 0 1) using atomic layer deposition. Journal of crystal growth, 285(1-2), 208-214. doi:10.1016/j.jcrysgro.2005.08.003