Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/9730
Title: Incorporation and activation of arsenic in MBE-grown HgCdTe
Authors: Tsen, GK
Sewell, RH
Atanacio, AJ
Prince, KE
Musca, CA
Dell, JM
Faraone, L
Keywords: Annealing
Arsenic
Mass spectroscopy
Molecular beam epitaxy
Optimization
Diffusion
Issue Date: 12-Dec-2007
Publisher: IOP Publishing
Citation: Tsen, G. K. O., Sewell, R. H., Atanacio, A. J., Prince, K. E., Musca, C. A., Dell, J. M., & Faraone, L. (2007). Incorporation and activation of arsenic in MBE-grown HgCdTe. Semiconductor science and technology, 23(1), 015014. doi:10.1088/0268-1242/23/1/015014
Abstract: Research into p-type doping of HgCdTe with arsenic has concentrated on the use of a conventional effusion cell and optimization of growth conditions to achieve an increase in incorporation efficiency. This study investigates the use of a cracker cell, which is now the preferred method of doping HgCdTe due to its higher arsenic incorporation efficiency under optimum growth conditions. A detailed investigation of a number of arsenic doped HgCdTe layers grown on CdZnTe substrates by molecular beam epitaxy using a cracker cell as a source of arsenic is presented. Growth parameters influencing the amount of arsenic incorporated, such as the cracker-cell bulk temperature and substrate temperature, were investigated. Arsenic depth profiles were obtained via detailed secondary ion mass spectrometry where all major constituents in the epilayers were analysed. Magneto-transport Hall measurements were performed on as-grown material and those that underwent high-temperature anneals typical for arsenic activation. Using the quantitative mobility spectrum analysis technique, contributions to total conductivity arising from various carriers present in the samples have been separated. As-grown samples were found to exhibit n-type behaviour consistent with arsenic incorporating on cation sublattice, while samples that underwent high-temperature annealing show partial activation of arsenic with electron compensation. © Copyright 2007 IOP Publishing
Gov't Doc #: 9866
URI: https://iopscience.iop.org/article/10.1088/0268-1242/23/1/015014
http://apo.ansto.gov.au/dspace/handle/10238/9730
ISSN: 1361-6641
Appears in Collections:Journal Articles

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