Please use this identifier to cite or link to this item:
|Title:||Incorporation and activation of arsenic in MBE-grown HgCdTe|
Molecular beam epitaxy
|Citation:||Tsen, G. K. O., Sewell, R. H., Atanacio, A. J., Prince, K. E., Musca, C. A., Dell, J. M., & Faraone, L. (2007). Incorporation and activation of arsenic in MBE-grown HgCdTe. Semiconductor science and technology, 23(1), 015014. doi:10.1088/0268-1242/23/1/015014|
|Abstract:||Research into p-type doping of HgCdTe with arsenic has concentrated on the use of a conventional effusion cell and optimization of growth conditions to achieve an increase in incorporation efficiency. This study investigates the use of a cracker cell, which is now the preferred method of doping HgCdTe due to its higher arsenic incorporation efficiency under optimum growth conditions. A detailed investigation of a number of arsenic doped HgCdTe layers grown on CdZnTe substrates by molecular beam epitaxy using a cracker cell as a source of arsenic is presented. Growth parameters influencing the amount of arsenic incorporated, such as the cracker-cell bulk temperature and substrate temperature, were investigated. Arsenic depth profiles were obtained via detailed secondary ion mass spectrometry where all major constituents in the epilayers were analysed. Magneto-transport Hall measurements were performed on as-grown material and those that underwent high-temperature anneals typical for arsenic activation. Using the quantitative mobility spectrum analysis technique, contributions to total conductivity arising from various carriers present in the samples have been separated. As-grown samples were found to exhibit n-type behaviour consistent with arsenic incorporating on cation sublattice, while samples that underwent high-temperature annealing show partial activation of arsenic with electron compensation. © Copyright 2007 IOP Publishing|
|Gov't Doc #:||9866|
|Appears in Collections:||Journal Articles|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.