Incorporation and activation of arsenic in MBE-grown HgCdTe

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dc.contributor.authorTsen, GKen_AU
dc.contributor.authorSewell, RHen_AU
dc.contributor.authorAtanacio, AJen_AU
dc.contributor.authorPrince, KEen_AU
dc.contributor.authorMusca, CAen_AU
dc.contributor.authorDell, JMen_AU
dc.contributor.authorFaraone, Len_AU
dc.date.accessioned2020-08-31T07:28:10Zen_AU
dc.date.available2020-08-31T07:28:10Zen_AU
dc.date.issued2007-12-12en_AU
dc.date.statistics2020-08-06en_AU
dc.description.abstractResearch into p-type doping of HgCdTe with arsenic has concentrated on the use of a conventional effusion cell and optimization of growth conditions to achieve an increase in incorporation efficiency. This study investigates the use of a cracker cell, which is now the preferred method of doping HgCdTe due to its higher arsenic incorporation efficiency under optimum growth conditions. A detailed investigation of a number of arsenic doped HgCdTe layers grown on CdZnTe substrates by molecular beam epitaxy using a cracker cell as a source of arsenic is presented. Growth parameters influencing the amount of arsenic incorporated, such as the cracker-cell bulk temperature and substrate temperature, were investigated. Arsenic depth profiles were obtained via detailed secondary ion mass spectrometry where all major constituents in the epilayers were analysed. Magneto-transport Hall measurements were performed on as-grown material and those that underwent high-temperature anneals typical for arsenic activation. Using the quantitative mobility spectrum analysis technique, contributions to total conductivity arising from various carriers present in the samples have been separated. As-grown samples were found to exhibit n-type behaviour consistent with arsenic incorporating on cation sublattice, while samples that underwent high-temperature annealing show partial activation of arsenic with electron compensation. © Copyright 2007 IOP Publishingen_AU
dc.identifier.articlenumber015014en_AU
dc.identifier.citationTsen, G. K. O., Sewell, R. H., Atanacio, A. J., Prince, K. E., Musca, C. A., Dell, J. M., & Faraone, L. (2007). Incorporation and activation of arsenic in MBE-grown HgCdTe. Semiconductor Science and Technology, 23(1), 015014. doi:10.1088/0268-1242/23/1/015014en_AU
dc.identifier.govdoc9866en_AU
dc.identifier.issn1361-6641en_AU
dc.identifier.issue1en_AU
dc.identifier.journaltitleSemiconductor Science and Technologyen_AU
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/0268-1242/23/1/015014en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/9730en_AU
dc.identifier.volume23en_AU
dc.language.isoenen_AU
dc.publisherIOP Publishingen_AU
dc.subjectAnnealingen_AU
dc.subjectArsenicen_AU
dc.subjectMass spectroscopyen_AU
dc.subjectMolecular beam epitaxyen_AU
dc.subjectOptimizationen_AU
dc.subjectDiffusionen_AU
dc.titleIncorporation and activation of arsenic in MBE-grown HgCdTeen_AU
dc.typeJournal Articleen_AU
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