Incorporation and activation of arsenic in MBE-grown HgCdTe
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Date
2007-12-12
Journal Title
Journal ISSN
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Publisher
IOP Publishing
Abstract
Research into p-type doping of HgCdTe with arsenic has concentrated on the use of a conventional effusion cell and optimization of growth conditions to achieve an increase in incorporation efficiency. This study investigates the use of a cracker cell, which is now the preferred method of doping HgCdTe due to its higher arsenic incorporation efficiency under optimum growth conditions. A detailed investigation of a number of arsenic doped HgCdTe layers grown on CdZnTe substrates by molecular beam epitaxy using a cracker cell as a source of arsenic is presented. Growth parameters influencing the amount of arsenic incorporated, such as the cracker-cell bulk temperature and substrate temperature, were investigated. Arsenic depth profiles were obtained via detailed secondary ion mass spectrometry where all major constituents in the epilayers were analysed. Magneto-transport Hall measurements were performed on as-grown material and those that underwent high-temperature anneals typical for arsenic activation. Using the quantitative mobility spectrum analysis technique, contributions to total conductivity arising from various carriers present in the samples have been separated. As-grown samples were found to exhibit n-type behaviour consistent with arsenic incorporating on cation sublattice, while samples that underwent high-temperature annealing show partial activation of arsenic with electron compensation. © Copyright 2007 IOP Publishing
Description
Keywords
Annealing, Arsenic, Mass spectroscopy, Molecular beam epitaxy, Optimization, Diffusion
Citation
Tsen, G. K. O., Sewell, R. H., Atanacio, A. J., Prince, K. E., Musca, C. A., Dell, J. M., & Faraone, L. (2007). Incorporation and activation of arsenic in MBE-grown HgCdTe. Semiconductor Science and Technology, 23(1), 015014. doi:10.1088/0268-1242/23/1/015014