Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/678
Title: Preliminary investigations of the formation of laser-doped contacts on semiconductors
Authors: Lawson, EM
Keywords: Electric contacts
Annealing
Laser radiation
P-type conductors
Germanium
Doped materials
Issue Date: Oct-1981
Publisher: Australian Atomic Energy Commission
Citation: Lawson, E. M. (1981). Preliminary investigations of the formation of laser-doped contacts on semiconductors. (AAEC/E523). Lucas Heights, NSW: Australian Atomic Energy Commission.
Abstract: Contacts formed by laser doping single crystal semiconducting samples have been investigated by a variety of techniques. p- and n-type contacts have been formed on Ge, Si and GaAs by irradiating evaporated surface layers with a Q-switched ruby laser. The contact produced were thin and heavily doped. Techniques used to examine the contacts include Rutherford backscattering, scanning electron microscopy and sheet Hall and resistivity measurements.
Gov't Doc #: 688
URI: http://apo.ansto.gov.au/dspace/handle/10238/678
ISBN: 0642597219
Appears in Collections:Scientific and Technical Reports

Files in This Item:
File Description SizeFormat 
AAEC-E-523.pdf470.92 kBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.