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|Title:||Preliminary investigations of the formation of laser-doped contacts on semiconductors|
|Publisher:||Australian Atomic Energy Commission|
|Citation:||Lawson, E. M. (1981). Preliminary investigations of the formation of laser-doped contacts on semiconductors. (AAEC/E523). Lucas Heights, NSW: Australian Atomic Energy Commission.|
|Abstract:||Contacts formed by laser doping single crystal semiconducting samples have been investigated by a variety of techniques. p- and n-type contacts have been formed on Ge, Si and GaAs by irradiating evaporated surface layers with a Q-switched ruby laser. The contact produced were thin and heavily doped. Techniques used to examine the contacts include Rutherford backscattering, scanning electron microscopy and sheet Hall and resistivity measurements.|
|Gov't Doc #:||688|
|Appears in Collections:||Scientific and Technical Reports|
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