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https://apo.ansto.gov.au/dspace/handle/10238/314| Title: | Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature |
| Authors: | Pearton, SJ Williams, AA Tavendale, AJ Lawson, EM |
| Keywords: | Emission spectroscopy Semiconductor materials Geramium Radiation effects Gamma radiation Annealing |
| Issue Date: | Sep-1980 |
| Publisher: | Australian Atomic Energy Commission |
| Citation: | Pearton, S. J., Williams, A. A., Tavendale, A. J., & Lawson, E. M. (1980). Transient capacitance measurements of deep level defects introduced in Y-ray compensated germanium by long-term annealing at room temperature (ANSTO/E-501). Lucas Heights, NSW: Australian Atomic Energy Commission, Research Establishment. |
| Abstract: | Deep level transient spectroscopy (DLTS) has been applied to defect centres in γ-ray compensated germanium that has been subjected to long-term annealing at room temperature. Deep donor levels (Ec - 0.36 eV Ec - 0.20 eV) have been observed for the first time; annealing at 675ºC for 3 hours increased their concentration in proportion to the free carrier density indicating stable defect-impurity complexes. Recently irradiated samples from the original material have not shown these levels. The results support Russian work on the compensation mechanism - the formation of electically inactive vacancy-donor complexes. |
| Gov't Doc #: | 393 |
| URI: | http://apo.ansto.gov.au/dspace/handle/10238/314 |
| ISBN: | 0642596980 0642596980 |
| Appears in Collections: | Scientific and Technical Reports |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| AAEC-E-501.pdf | 366.45 kB | Adobe PDF |  View/Open |
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