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|Title:||Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature|
|Publisher:||Australian Atomic Energy Commission|
|Citation:||Pearton, S. J., Williams, A. A., Tavendale, A. J., & Lawson, E. M. (1980). Transient capacitance measurements of deep level defects introduced in Y-ray compensated germanium by long-term annealing at room temperature (ANSTO/E-501). Lucas Heights, NSW: Australian Atomic Energy Commission, Research Establishment.|
|Abstract:||Deep level transient spectroscopy (DLTS) has been applied to defect centres in γ-ray compensated germanium that has been subjected to long-term annealing at room temperature. Deep donor levels (Ec - 0.36 eV Ec - 0.20 eV) have been observed for the first time; annealing at 675ºC for 3 hours increased their concentration in proportion to the free carrier density indicating stable defect-impurity complexes. Recently irradiated samples from the original material have not shown these levels. The results support Russian work on the compensation mechanism - the formation of electically inactive vacancy-donor complexes.|
|Gov't Doc #:||393|
|Appears in Collections:||Scientific and Technical Reports|
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