Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/314
Title: Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature
Authors: Pearton, SJ
Williams, AA
Tavendale, AJ
Lawson, EM
Keywords: Emission spectroscopy
Semiconductor materials
Geramium
Radiation effects
Gamma radiation
Annealing
Issue Date: Sep-1980
Publisher: Australian Atomic Energy Commission
Citation: Pearton, S. J., Williams, A. A., Tavendale, A. J., & Lawson, E. M. (1980). Transient capacitance measurements of deep level defects introduced in Y-ray compensated germanium by long-term annealing at room temperature (ANSTO/E-501). Lucas Heights, NSW: Australian Atomic Energy Commission, Research Establishment.
Abstract: Deep level transient spectroscopy (DLTS) has been applied to defect centres in γ-ray compensated germanium that has been subjected to long-term annealing at room temperature. Deep donor levels (Ec - 0.36 eV Ec - 0.20 eV) have been observed for the first time; annealing at 675ºC for 3 hours increased their concentration in proportion to the free carrier density indicating stable defect-impurity complexes. Recently irradiated samples from the original material have not shown these levels. The results support Russian work on the compensation mechanism - the formation of electically inactive vacancy-donor complexes.
Gov't Doc #: 393
URI: http://apo.ansto.gov.au/dspace/handle/10238/314
ISBN: 0642596980
0642596980
Appears in Collections:Scientific and Technical Reports

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