Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature

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dc.contributor.authorPearton, SJen_AU
dc.contributor.authorWilliams, AAen_AU
dc.contributor.authorTavendale, AJen_AU
dc.contributor.authorLawson, EMen_AU
dc.date.accessioned2007-11-22T04:19:05Zen_AU
dc.date.accessioned2010-04-30T04:33:26Zen_AU
dc.date.available2007-11-22T04:19:05Zen_AU
dc.date.available2010-04-30T04:33:26Zen_AU
dc.date.issued1980-09en_AU
dc.description.abstractDeep level transient spectroscopy (DLTS) has been applied to defect centres in γ-ray compensated germanium that has been subjected to long-term annealing at room temperature. Deep donor levels (Ec - 0.36 eV Ec - 0.20 eV) have been observed for the first time; annealing at 675ºC for 3 hours increased their concentration in proportion to the free carrier density indicating stable defect-impurity complexes. Recently irradiated samples from the original material have not shown these levels. The results support Russian work on the compensation mechanism - the formation of electically inactive vacancy-donor complexes.en_AU
dc.identifier.citationPearton, S. J., Williams, A. A., Tavendale, A. J., & Lawson, E. M. (1980). Transient capacitance measurements of deep level defects introduced in Y-ray compensated germanium by long-term annealing at room temperature (ANSTO/E-501). Lucas Heights, NSW: Australian Atomic Energy Commission, Research Establishment.en_AU
dc.identifier.govdoc393en_AU
dc.identifier.isbn0642596980en_AU
dc.identifier.isbn0642596980en_AU
dc.identifier.otherAAEC-E-501en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/314en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectEmission spectroscopyen_AU
dc.subjectSemiconductor materialsen_AU
dc.subjectGermaniumen_AU
dc.subjectRadiation effectsen_AU
dc.subjectGamma radiationen_AU
dc.subjectAnnealingen_AU
dc.titleTransient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperatureen_AU
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