Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature
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Date
1980-09
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Atomic Energy Commission
Abstract
Deep level transient spectroscopy (DLTS) has been applied to defect centres in γ-ray compensated germanium that has been subjected to long-term annealing at room temperature. Deep donor levels (Ec - 0.36 eV Ec - 0.20 eV) have been observed for the first time; annealing at 675ºC for 3 hours increased their concentration in proportion to the free carrier density indicating stable defect-impurity complexes. Recently irradiated samples from the original material have not shown these levels. The results support Russian work on the compensation mechanism - the formation of electically inactive vacancy-donor complexes.
Description
Keywords
Emission spectroscopy, Semiconductor materials, Germanium, Radiation effects, Gamma radiation, Annealing
Citation
Pearton, S. J., Williams, A. A., Tavendale, A. J., & Lawson, E. M. (1980). Transient capacitance measurements of deep level defects introduced in Y-ray compensated germanium by long-term annealing at room temperature (ANSTO/E-501). Lucas Heights, NSW: Australian Atomic Energy Commission, Research Establishment.