ANSTO Publications Online: Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature.

Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/314

Title:	Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature.
Authors:	Pearton, SJ Williams, AA Tavendale, AJ Lawson, EM
Issue Date:	Sep-1980
Publisher:	Australian Nuclear Science and Technology Organisation
Abstract:	Deep level transient spectroscopy (DLTS) has been applied to defect centres in γ-ray compensated germanium that has been subjected to long-term annealing at room temperature. Deep donor levels (Ec - 0.36 eV Ec - 0.20 eV) have been observed for the first time; annealing at 675ºC for 3 hours increased their concentration in proportion to the free carrier density indicating stable defect-impurity complexes. Recently irradiated samples from the original material have not shown these levels. The results support Russian work on the compensation mechanism - the formation of electically inactive vacancy-donor complexes.
URI:	http://apo.ansto.gov.au/dspace/handle/10238/314
ISBN:	0642596980
Appears in Collections:	Scientific and Technical Reports

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