Please use this identifier to cite or link to this item:
https://apo.ansto.gov.au/dspace/handle/10238/311
Title: | Deep level transient spectroscopy of y-ray induced defects in germanium. Crystals |
Authors: | Pearton, SJ Williams, AA Tavendale, AJ |
Keywords: | Germanium Gamma spectroscopy Transients Semiconductor detectors Irradiation |
Issue Date: | Dec-1980 |
Publisher: | Australian Atomic Energy Commission |
Citation: | Pearton, S. J & Tavendale, A. J & Williams, A. A. (1980). Deep level transient spectroscopy of Y-ray induced defects in germanium (AAEC/E-502). Lucas Heights, NSW: Australian Atomic Energy Commission Research Establishment. |
Abstract: | Deep level transient capacitance spectroscopy has been used to examine γ-ray induced defect centres in germanium crystals grown under widely varying conditions. A deep acceptor level at Eν + 0.38 eν has been observed for the first time in all p-type samples; this was removed by annealing at 675 deg C for three hours. A new deep donor level at Eс - 0.42 eν observed in n-type material was not removed by this procedure. |
Gov't Doc #: | 188 |
URI: | http://apo.ansto.gov.au/dspace/handle/10238/311 |
ISBN: | 0642596999 0642596999 |
Appears in Collections: | Scientific and Technical Reports |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
AAEC-E-502.pdf | 282.17 kB | Adobe PDF | ![]() View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.