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https://apo.ansto.gov.au/dspace/handle/10238/311| Title: | Deep level transient spectroscopy of y-ray induced defects in germanium Crystals |
| Authors: | Pearton, SJ Williams, AA Tavendale, AJ |
| Keywords: | Germanium Gamma spectroscopy Transients Semiconductor detectors Irradiation |
| Issue Date: | Dec-1980 |
| Publisher: | Australian Atomic Energy Commission |
| Citation: | Pearton, S. J & Tavendale, A. J & Williams, A. A. (1980). Deep level transient spectroscopy of Y-ray induced defects in germanium (AAEC/E-502). Lucas Heights, NSW: Australian Atomic Energy Commission Research Establishment. |
| Abstract: | Deep level transient capacitance spectroscopy has been used to examine γ-ray induced defect centres in germanium crystals grown under widely varying conditions. A deep acceptor level at Eν + 0.38 eν has been observed for the first time in all p-type samples; this was removed by annealing at 675 deg C for three hours. A new deep donor level at Eс - 0.42 eν observed in n-type material was not removed by this procedure. |
| Gov't Doc #: | 188 |
| URI: | http://apo.ansto.gov.au/dspace/handle/10238/311 |
| ISBN: | 0642596999 0642596999 |
| Appears in Collections: | Scientific and Technical Reports |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| AAEC-E-502.pdf | 282.17 kB | Adobe PDF |  View/Open |
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