Deep level transient spectroscopy of y-ray induced defects in germanium

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dc.contributor.authorPearton, SJen_AU
dc.contributor.authorWilliams, AAen_AU
dc.contributor.authorTavendale, AJen_AU
dc.date.accessioned2007-11-22T04:19:01Zen_AU
dc.date.accessioned2010-04-30T04:29:51Zen_AU
dc.date.available2007-11-22T04:19:01Zen_AU
dc.date.available2010-04-30T04:29:51Zen_AU
dc.date.issued1980-12en_AU
dc.description.abstractDeep level transient capacitance spectroscopy has been used to examine γ-ray induced defect centres in germanium crystals grown under widely varying conditions. A deep acceptor level at Eν + 0.38 eν has been observed for the first time in all p-type samples; this was removed by annealing at 675 deg C for three hours. A new deep donor level at Eс - 0.42 eν observed in n-type material was not removed by this procedure.en_AU
dc.identifier.citationPearton, S. J & Tavendale, A. J & Williams, A. A. (1980). Deep level transient spectroscopy of Y-ray induced defects in germanium (AAEC/E-502). Lucas Heights, NSW: Australian Atomic Energy Commission Research Establishment.en_AU
dc.identifier.govdoc188en_AU
dc.identifier.isbn0642596999en_AU
dc.identifier.isbn0642596999en_AU
dc.identifier.otherAAEC-E-502en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/311en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectGermaniumen_AU
dc.subjectGamma spectroscopyen_AU
dc.subjectTransientsen_AU
dc.subjectSemiconductor detectorsen_AU
dc.subjectIrradiationen_AU
dc.titleDeep level transient spectroscopy of y-ray induced defects in germaniumen_AU
dc.titleCrystalsen_AU
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