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Title: Deep level transient spectroscopy of n-GaAs surface barrier diodes for nuclear radiation detection
Authors: Pearton, SJ
Alexiev, D
Tavendale, AJ
Williams, AA
Keywords: Deep level transient spectroscopy
Radiation detection
Radiation detectors
Crystal lattices
Issue Date: Jan-1981
Publisher: Australian Atomic Energy Commission
Citation: Pearton, S. (1981). Deep level transient spectroscopy of n-gaas surface barrier diodes for nuclear radiation detection (AAEC/E503). Lucas Heights, N.S.W.: Australian Atomic Energy Commission, Research Establishment, Lucas Heights.
Abstract: Deep level transient spectroscopy has been applied for the first time to the study of deep level defects in n-GaAs nuclear radiation detectors. Devices made from commercial bulk and epitaxial material with net donor impurity densities in the range 5 x 10 13 -3 x 10 16 cm -3 have been studied and several common levels observed. The Poole-Frenkel effect has been identified in three levels (Ev + 0.19 eV, Ec - 0.62 eV Ec - 0.73 eV) in the epitaxial GaAs. A value for the Poole-Frenkel constant of β = 4.7 ≥ 1.4 x 10-4 eV V-½ cm½ was obtained compared to the theoretical value for GaAs of 2.3 x 10-4 eV V-½ cm½.
Gov't Doc #: 386
ISBN: 0642597057
Appears in Collections:Scientific and Technical Reports

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