Deep level transient spectroscopy of n-GaAs surface barrier diodes for nuclear radiation detection
Australian Atomic Energy Commission
Deep level transient spectroscopy has been applied for the first time to the study of deep level defects in n-GaAs nuclear radiation detectors. Devices made from commercial bulk and epitaxial material with net donor impurity densities in the range 5 x 10 13 -3 x 10 16 cm -3 have been studied and several common levels observed. The Poole-Frenkel effect has been identified in three levels (Ev + 0.19 eV, Ec - 0.62 eV Ec - 0.73 eV) in the epitaxial GaAs. A value for the Poole-Frenkel constant of β = 4.7 ≥ 1.4 x 10-4 eV V-½ cm½ was obtained compared to the theoretical value for GaAs of 2.3 x 10-4 eV V-½ cm½.
Deep level transient spectroscopy, Radiation detection, Defects, Radiation detectors, Gallium, Crystal lattices, Impurities
Pearton, S. (1981). Deep level transient spectroscopy of n-gaas surface barrier diodes for nuclear radiation detection (AAEC/E503). Lucas Heights, N.S.W.: Australian Atomic Energy Commission, Research Establishment, Lucas Heights.