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ANSTO Publications Online >
ANSTO Publications >
Scientific and Technical Reports >
Please use this identifier to cite or link to this item:
http://apo.ansto.gov.au/dspace/handle/10238/303
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| Title: | Deep level transient spectroscopy of n-GaAs surface barrier diodes for nuclear radiation detection. |
| Authors: | Pearton, SJ Alexiev, D Tavendale, AJ Williams, AA |
| Issue Date: | Jan-1981 |
| Publisher: | Australian Nuclear Science and Technology Organisation |
| Abstract: | Deep level transient spectroscopy has been applied for the first time to the study of deep level defects in n-GaAs nuclear radiation detectors. Devices made from commercial bulk and epitaxial material with net donor impurity densities in the range 5 x 10 13 -3 x 10 16 cm -3 have been studied and several common levels observed. The Poole-Frenkel effect has been identified in three levels (Ev + 0.19 eV, Ec - 0.62 eV Ec - 0.73 eV) in the epitaxial GaAs. A value for the Poole-Frenkel constant of β = 4.7 ≥ 1.4 x 10-4 eV V-½ cm½ was obtained compared to the theoretical value for GaAs of 2.3 x 10-4 eV V-½ cm½. |
| URI: | http://apo.ansto.gov.au/dspace/handle/10238/303 |
| ISBN: | 0642597057 |
| Appears in Collections: | Scientific and Technical Reports |
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