Deep level transient spectroscopy of n-GaAs surface barrier diodes for nuclear radiation detection

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dc.contributor.authorPearton, SJen_AU
dc.contributor.authorAlexiev, Den_AU
dc.contributor.authorTavendale, AJen_AU
dc.contributor.authorWilliams, AAen_AU
dc.date.accessioned2007-11-22T04:18:50Zen_AU
dc.date.accessioned2010-04-30T04:33:19Zen_AU
dc.date.available2007-11-22T04:18:50Zen_AU
dc.date.available2010-04-30T04:33:19Zen_AU
dc.date.issued1981-01en_AU
dc.description.abstractDeep level transient spectroscopy has been applied for the first time to the study of deep level defects in n-GaAs nuclear radiation detectors. Devices made from commercial bulk and epitaxial material with net donor impurity densities in the range 5 x 10 13 -3 x 10 16 cm -3 have been studied and several common levels observed. The Poole-Frenkel effect has been identified in three levels (Ev + 0.19 eV, Ec - 0.62 eV Ec - 0.73 eV) in the epitaxial GaAs. A value for the Poole-Frenkel constant of β = 4.7 ≥ 1.4 x 10-4 eV V-½ cm½ was obtained compared to the theoretical value for GaAs of 2.3 x 10-4 eV V-½ cm½.en_AU
dc.identifier.citationPearton, S. (1981). Deep level transient spectroscopy of n-gaas surface barrier diodes for nuclear radiation detection (AAEC/E503). Lucas Heights, N.S.W.: Australian Atomic Energy Commission, Research Establishment, Lucas Heights.en_AU
dc.identifier.govdoc386en_AU
dc.identifier.isbn0642597057en_AU
dc.identifier.otherAAEC-E-503en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/303en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectDeep level transient spectroscopyen_AU
dc.subjectRadiation detectionen_AU
dc.subjectDefectsen_AU
dc.subjectRadiation detectorsen_AU
dc.subjectGalliumen_AU
dc.subjectCrystal latticesen_AU
dc.subjectImpuritiesen_AU
dc.titleDeep level transient spectroscopy of n-GaAs surface barrier diodes for nuclear radiation detectionen_AU
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