Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/184
Title: Neutron transmutation doping of silicon for the production of radiation detectors
Authors: Alexiev, D
Keywords: Radiation detectors
Silicon
Transmutation
Neutrons
Issue Date: Nov-1987
Publisher: Australian Nuclear Science and Technology Organisation
Citation: Alexiev, D. (1987). Neutron transmutation doping of silicon for the production of radiation detectors (ANSTO-E-668). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation.
Abstract: P-type silicon was doped by neutron transmutation (NTD-Si) to produce high resistivity n-type silicon suitable for the production of surface barrier radiation detectors. Deep level transient spectroscopy (DLTS) analysis showed no remnant traps following annealing (850 deg C) of the NTD-Si in the presence of a phosphosilicate glass getter. Surface barrier radiation detectors constructed from this material showed no significant charge trapping and compare favourably with those constructed of float-zone (FZ) Si.
Gov't Doc #: 124
URI: http://apo.ansto.gov.au/dspace/handle/10238/184
ISBN: 0642598711
0642598711
ISSN: 10307745
Appears in Collections:Scientific and Technical Reports

Files in This Item:
File Description SizeFormat 
ANSTO-E-668.pdf551.85 kBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.