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Title: Neutron transmutation doping of silicon for the production of radiation detectors.
Authors: Alexiev, D
Issue Date: Nov-1987
Publisher: Australian Nuclear Science and Technology Organisation
Abstract: P-type silicon was doped by neutron transmutation (NTD-Si) to produce high resistivity n-type silicon suitable for the production of surface barrier radiation detectors. Deep level transient spectroscopy (DLTS) analysis showed no remnant traps following annealing (850 deg C) of the NTD-Si in the presence of a phosphosilicate glass getter. Surface barrier radiation detectors constructed from this material showed no significant charge trapping and compare favourably with those constructed of float-zone (FZ) Si.
ISBN: 0642598711
ISSN: 10307745
Appears in Collections:Scientific and Technical Reports

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