Neutron transmutation doping of silicon for the production of radiation detectors

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dc.contributor.authorAlexiev, Den_AU
dc.date.accessioned2007-11-22T04:14:17Zen_AU
dc.date.accessioned2010-04-30T04:28:30Zen_AU
dc.date.available2007-11-22T04:14:17Zen_AU
dc.date.available2010-04-30T04:28:30Zen_AU
dc.date.issued1987-11en_AU
dc.description.abstractP-type silicon was doped by neutron transmutation (NTD-Si) to produce high resistivity n-type silicon suitable for the production of surface barrier radiation detectors. Deep level transient spectroscopy (DLTS) analysis showed no remnant traps following annealing (850 deg C) of the NTD-Si in the presence of a phosphosilicate glass getter. Surface barrier radiation detectors constructed from this material showed no significant charge trapping and compare favourably with those constructed of float-zone (FZ) Si.en_AU
dc.identifier.citationAlexiev, D. (1987). Neutron transmutation doping of silicon for the production of radiation detectors (ANSTO-E-668). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation.en_AU
dc.identifier.govdoc124en_AU
dc.identifier.isbn0642598711en_AU
dc.identifier.isbn0642598711en_AU
dc.identifier.issn10307745en_AU
dc.identifier.otherANSTO-E-668en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/184en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.subjectRadiation detectorsen_AU
dc.subjectSiliconen_AU
dc.subjectTransmutationen_AU
dc.subjectNeutronsen_AU
dc.titleNeutron transmutation doping of silicon for the production of radiation detectorsen_AU
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