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Title: Ion-irradiation-induced porosity in GaSb and InSb
Authors: Kluth, SM
Johannessen, B
Kluth, P
Glover, CJ
Foran, GJ
Ridgway, MC
Keywords: Antimonides
Antimony compounds
Charged particles
Crystal defects
Crystal structure
Gallium comounds
Indium compounds
Point defects
Radiation effects
Issue Date: 31-Jan-2005
Publisher: Australian Institute of Physics
Citation: Kluth, S. M., Johannessen, B., Kluth, P., Glover, C. J., Foran, G. J. & Ridgway, M. C.(2005). lon-irradiation-induced porosity in GaSb and InSb. Paper presented to the 29th Condensed Matter and Materials Meeting, "Australian Institute of Physics Sixteenth Biennial Congress", Canberra, 2005, 31 January - 4 February 2005. Retrieved from:
Abstract: Ion irradiation of crystalline GaSb and InSb can yield not only amorphisation, as commonly observed in semiconductors, but also porosity. Extended x-ray absorption fine structure spectroscopy, electron microscopy and Rutherford backscattering spectrometry have been used to determine the exact nature of and relationship between these two transformations. In both materials, low dose, room temperature implantation produces spherical voids yet the material remains crystalline. With increasing implant dose, the porous layer eventually evolves into a network of straight rods 15nm in diameter. We suggest the porosity arises from preferential clustering of interstitials into extended defects and vacancies agglomerating to form voids.
ISBN: 0-9598064-8-2
Appears in Collections:Conference Publications

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