Ion-irradiation-induced porosity in GaSb and InSb

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dc.contributor.authorKluth, SMen_AU
dc.contributor.authorJohannessen, Ben_AU
dc.contributor.authorKluth, Pen_AU
dc.contributor.authorGlover, CJen_AU
dc.contributor.authorForan, GJen_AU
dc.contributor.authorRidgway, MCen_AU
dc.date.accessioned2021-09-13T02:51:51Zen_AU
dc.date.available2021-09-13T02:51:51Zen_AU
dc.date.issued2005-01-31en_AU
dc.date.statistics2021-08-24en_AU
dc.description.abstractIon irradiation of crystalline GaSb and InSb can yield not only amorphisation, as commonly observed in semiconductors, but also porosity. Extended x-ray absorption fine structure spectroscopy, electron microscopy and Rutherford backscattering spectrometry have been used to determine the exact nature of and relationship between these two transformations. In both materials, low dose, room temperature implantation produces spherical voids yet the material remains crystalline. With increasing implant dose, the porous layer eventually evolves into a network of straight rods 15nm in diameter. We suggest the porosity arises from preferential clustering of interstitials into extended defects and vacancies agglomerating to form voids.en_AU
dc.identifier.citationKluth, S. M., Johannessen, B., Kluth, P., Glover, C. J., Foran, G. J. & Ridgway, M. C.(2005). lon-irradiation-induced porosity in GaSb and InSb. Paper presented to the 29th Condensed Matter and Materials Meeting, "Australian Institute of Physics Sixteenth Biennial Congress", Canberra, 2005, 31 January - 4 February 2005. en_AU
dc.identifier.conferenceenddate4 February 2005en_AU
dc.identifier.conferencename29th Condensed Matter and Materials Meeting, 'Australian Institute of Physics Sixteenth Biennial Congress'en_AU
dc.identifier.conferenceplaceCanberra, Australiaen_AU
dc.identifier.conferencestartdate31 January 2005en_AU
dc.identifier.isbn0-9598064-8-2en_AU
dc.identifier.otherCMMSP WEC12en_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/11674en_AU
dc.language.isoenen_AU
dc.publisherAustralian Institute of Physicsen_AU
dc.subjectAntimonidesen_AU
dc.subjectAntimony compoundsen_AU
dc.subjectCharged particlesen_AU
dc.subjectConfigurationen_AU
dc.subjectCrystal defectsen_AU
dc.subjectCrystal structureen_AU
dc.subjectGallium compoundsen_AU
dc.subjectIndium compoundsen_AU
dc.subjectMaterialsen_AU
dc.subjectMicroscopyen_AU
dc.subjectPnictidesen_AU
dc.subjectPoint defectsen_AU
dc.subjectRadiation effectsen_AU
dc.subjectSpectroscopyen_AU
dc.titleIon-irradiation-induced porosity in GaSb and InSben_AU
dc.typeConference Abstracten_AU
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