Variations in the apparent optical band-gap of RPE-CVD grown indium nitride thin films
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Date
2004-02-05
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Institute of Physics
Abstract
Indium nitride is a semiconducting material with a band-gap which is in current dispute.
Although a ~ 0.75 eV band-gap was announced by some international groups in 2002 [1,2], it
has since been shown that all the evidence for a ~ 0.75 eV band-gap is due to deep level
defects [3, 4]. Despite this there still appears to be anomolous variations in the apparent bandgap
for this material. The Macquarie University Low Temperature Nitride Film Growth
Facility has recently grown some very high quality indium nitride thin films by remote plasma
enhanced chemical vapour deposition (RPE-CVD). This material shows a variation in the
apparent band-gap, as measured by optical absorption techniques, of 1.2 eV to 1.8 eV,
dependent on the growth temperature and time. SIMS results measured by the ANSTO SIMS
group show that the oxygen content of the films is low and that the variation in the apparent
band-gap is not correlated to oxygen content. Other film properties will be described.
Description
Keywords
Indium nitrides, Thin films, Semiconductor materials, Band theory, Defects, Chemical vapor deposition, ANSTO, Australia
Citation
Butcher, K. S. A., Wintrebert-Fouquet, M., Chen, P. P.-T., Tansley, T. L., & Prince, K. E. (2004). Variations in the apparent optical band-gap of RPE-CVD grown indium nitride thin films. Poster presented to the 28th Annual Condensed Matter and Materials Meeting, Charles Sturt University, Wagga Wagga, 3-6 February 2004. Retrieved from: https://www.physics.org.au/wp-content/uploads/cmm/2004/04handbook.pdf