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Title: Variations in the apparent optical band-gap of RPE-CVD grown indium nitride thin films
Authors: Butcher, KSA
Wintrebert-Fouquet, M
Chen, PPT
Tansley, TL
Prince, KE
Keywords: Indium nitrides
Thin films
Semiconductor materials
Band theory
Chemical vapor deposition
Issue Date: 5-Feb-2004
Publisher: Australian Institute of Physics
Citation: Butcher, K. S. A., Wintrebert-Fouquet, M., Chen, P. P.-T., Tansley, T. L., & Prince, K. E. (2004). Variations in the apparent optical band-gap of RPE-CVD grown indium nitride thin films. Poster presented to the 28th Annual Condensed Matter and Materials Meeting, Charles Sturt University, Wagga Wagga, 3-6 February 2004. Retrieved from:
Abstract: Indium nitride is a semiconducting material with a band-gap which is in current dispute. Although a ~ 0.75 eV band-gap was announced by some international groups in 2002 [1,2], it has since been shown that all the evidence for a ~ 0.75 eV band-gap is due to deep level defects [3, 4]. Despite this there still appears to be anomolous variations in the apparent bandgap for this material. The Macquarie University Low Temperature Nitride Film Growth Facility has recently grown some very high quality indium nitride thin films by remote plasma enhanced chemical vapour deposition (RPE-CVD). This material shows a variation in the apparent band-gap, as measured by optical absorption techniques, of 1.2 eV to 1.8 eV, dependent on the growth temperature and time. SIMS results measured by the ANSTO SIMS group show that the oxygen content of the films is low and that the variation in the apparent band-gap is not correlated to oxygen content. Other film properties will be described.
ISSN: 1037-1214
Appears in Collections:Conference Publications

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